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| PD -95183 IRG4PC40WPBF INSULATED GATE BIPOLAR TRANSISTOR Features * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and constructionoffers tighter parameters distribution, exceptional reliability * Lead-Free C VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel Benefits * Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 40 20 160 160 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 0.77 --- 40 --- Units C/W g (oz) www.irf.com 1 04/23/04 IRG4PC40WPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.44 -- 2.05 Collector-to-Emitter Saturation Voltage -- 2.36 VCE(ON) -- 1.90 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- 13 gfe Forward Transconductance U 18 28 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.5 IC = 20A VGE = 15V -- IC = 40A See Fig.2, 5 V -- IC = 20A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100 V, IC =20A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 2500 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 98 12 36 27 22 100 74 0.11 0.23 0.34 25 23 170 124 0.85 13 1900 140 35 Max. Units Conditions 147 IC = 20A 18 nC VCC = 400V See Fig.8 54 VGE = 15V -- -- TJ = 25C ns 150 IC = 20A, VCC = 480V 110 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 9,10, 14 0.45 -- TJ = 150C, -- IC = 20A, VCC = 480V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig.10,11, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC40WPBF 50 F o r b o th : Tria n g u la r w a ve : 40 Load Current ( A ) D u ty c y c le : 5 0 % TJ = 12 5 C T s in k = 9 0 C G at e d riv e as sp ec ifie d P o w e r D is s ip a tio n = 2 8 W C la m p vo l ta g e : 8 0 % o f ra te d 30 S q u a re w ave : 6 0 % o f ra t e d v o lta g e 20 10 Id e al d io d e s 0 0.1 1 10 100 A 1000 f, Frequency (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 TJ = 25 C TJ = 150 C 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 100 TJ = 150 C 10 10 TJ = 25 C 1 1.0 V = 15V 80s PULSE WIDTH GE 2.0 3.0 4.0 5.0 1 V = 50V 5s PULSE WIDTH CC 5 7 9 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC40WPBF 50 3.0 VCE , Collector-to-Emitter Voltage(V) V = 15V WIDTH 80 us PULSE GE Maximum DC Collector Current(A) 40 IC = 40 A 2.5 30 2.0 IC = 20 A IC = 10 A 20 10 1.5 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40WPBF 4000 VGE, Gate-to-Emitter Voltage (V) C, Capacitance (pF) 3000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 20A 16 Cies 2000 12 C oes 1000 8 C res 4 0 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 100 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.0 Total Switching Losses (mJ) 0.8 0.7 0.6 0.5 0.4 0.3 Total Switching Losses (mJ) V CC = 480V V GE = 15V 0.9 TJ = 25 C I C = 20A 10 RG = 10Ohm 10 VGE = 15V VCC = 480V IC = 40 A 1 IC = 20 A IC = 10 A 10 () RG , Gate Resistance (Ohm) 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate www.irf.com Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40WPBF 2.0 1.5 1.0 0.5 0.0 SAFE OPERATING AREA 5 15 25 35 45 10 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE =10 10Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 I C , Collector-to-emitter Current (A) 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC40WPBF L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S VC D .U .T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on tf t=5 s E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PC40WPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRFPE30 WIT H AS S E MB LY LOT CODE 5657 AS S E MB LE D ON WW 35, 2000 IN T HE AS S E MB LY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RE CT IFIE R LOGO AS S E MB LY LOT CODE PART NUMB E R IRF PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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